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IXA12IF1200TC

IXYS
RoHS
/
Package TO-268-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IXYS SEMICONDUCTOR IXA12IF1200TC IGBT Single Transistor, 20 A, 2.1 V, 85 W, 1.2 kV, TO-268AA, 3 Pins
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Technical Details

Physical

Mount Surface Mount
Package / Case TO-268-3
Number of Pins 3

Technical

JESD-609 Code e3
Pbfree Code yes
Number of Terminations 2
ECCN Code EAR99
Terminal Finish PURE TIN
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 85W
Element Configuration Single
Power Dissipation 85W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 20A
Reverse Recovery Time 350 ns
JEDEC-95 Code TO-268AA
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 1.8V
Turn On Time 110 ns
Turn Off Time-Nom (toff) 350 ns
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V

Compliance

REACH SVHC No SVHC
RoHS Status RoHS Compliant

Dimensions

Height 5.1mm
Length 16.05mm
Width 14mm

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