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FD900R12IP4D

Infineon
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description INFINEON FD900R12IP4DIGBT Array & Module Transistor, High Power, N Channel, 900 A, 1.7 V, 5.1 kW, 1.2 kV, Module
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Technical Details

Physical

Mount Screw
Package / Case Module
Number of Pins 10

Technical

Pbfree Code yes
Moisture Sensitivity Level (MSL) 1
Number of Terminations 8
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-XUFM-X8
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 5.1kW
Element Configuration Single
Case Connection ISOLATED
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 900A
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 1.7V
Turn On Time 370 ns
Turn Off Time-Nom (toff) 1300 ns
Gate-Emitter Voltage-Max 20V
VCEsat-Max 2.05 V

Compliance

REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead

Alternative Model

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