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IRLML6401GTRPBF

Infineon
RoHS
/
Package TO-236-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
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Inventory: 1179
Minimum: 1
Total Price: USD $0.08
Unit Price: USD $0.077976
≥1 USD $0.077976
≥10 USD $0.073561
≥100 USD $0.069396
≥500 USD $0.065469
≥1000 USD $0.061764

Technical Details

Physical

Mount Surface Mount
Package / Case TO-236-3
Number of Pins 3

Technical

Moisture Sensitivity Level (MSL) 1
ECCN Code EAR99
Resistance 50mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Number of Channels 1
Power Dissipation-Max 1.3W
Element Configuration Single
Power Dissipation 1.3W
Turn On Delay Time 11 ns
Voltage - Threshold -550mV
Rise Time 32ns
Drain to Source Voltage (Vdss) -12V
Polarity/Channel Type P-CHANNEL
Fall Time (Typ) 210 ns
Turn-Off Delay Time 250 ns
Continuous Drain Current (ID) -4.3A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 50mOhm
Rds On Max 50 mΩ
Capacitance - Input 830pF

Dimensions

Height 1.1mm
Length 3.0226mm
Width 1.397mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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