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RN2107,LF(CB

Toshiba
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Compliance

RoHS Status RoHS Compliant

Physical

Mount Surface Mount

Technical

Published 2014
Part Status Active
Power Dissipation-Max 100mW
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz

Alternative Model

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