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2N7002 L6327

Infineon Technologies AG
RoHS
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Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
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Technical Details

Physical

Surface Mount YES
Number of Terminals 3
Transistor Element Material SILICON

Technical

JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 0.3A
Drain-source On Resistance-Max 3Ohm
DS Breakdown Voltage-Min 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.5W
Feedback Cap-Max (Crss) 3 pF

Compliance

RoHS Status RoHS Compliant

Alternative Model

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