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IPP600N25N3 G
Infineon Technologies AGRoHS
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Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
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Pricing & Ordering
Inventory: 9215
Minimum: 1
Total Price: USD $2.75
Unit Price: USD $2.74612
≥1 USD $2.74612
≥10 USD $2.590679
≥100 USD $2.444037
≥500 USD $2.305689
≥1000 USD $2.175184
Technical Details
Physical
Surface Mount NO
Number of Terminals 3
Transistor Element Material SILICON
Technical
JESD-609 Code e3
Pbfree Code icon-pbfree yes
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 25A
Drain-source On Resistance-Max 0.06Ohm
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 250V
Avalanche Energy Rating (Eas) 210 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Compliance
RoHS Status RoHS Compliant
Alternative Model
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