Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 156W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 22A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRGS10B60KDPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 156W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 20 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 22A
Reverse Recovery Time 90 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 50 ns
Test Condition 400V, 10A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 10A
Turn Off Time-Nom (toff) 276 ns
IGBT Type NPT
Gate Charge 38nC
Current - Collector Pulsed (Icm) 44A
Td (on/off) @ 25°C 30ns/230ns
Switching Energy 140μJ (on), 250μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V