APT75GN120LG

Microsemi Corporation

RoHS

RoHS compliant

Package TO-264-3, TO-264AA

Category Discrete Semiconductor Products / Transistors - IGBTs - Single

Description Trans IGBT Chip N-CH 1.2KV 200A 3-Pin(3+Tab) TO-264

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Inventory: 212

Minimum: 1

Total Price: USD $15.12

Unit Price: USD $15.11664

≥1 USD $15.11664

≥10 USD $12.27765

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tube

Published 1999

JESD-609 Code e1

Pbfree Code yes

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature HIGH RELIABILITY

Subcategory Insulated Gate BIP Transistors

Voltage - Rated DC 1.2kV

Max Power Dissipation 833W

Current Rating 200A

Pin Count 3

JESD-30 Code R-PSFM-T3

Number of Elements 1

Element Configuration Single

Case Connection COLLECTOR

Input Type Standard

Turn On Delay Time 60 ns

Transistor Application POWER CONTROL

Polarity/Channel Type N-CHANNEL

Turn-Off Delay Time 620 ns

Collector Emitter Voltage (VCEO) 1.2kV

Max Collector Current 200A

Collector Emitter Breakdown Voltage 1.2kV

Voltage - Collector Emitter Breakdown (Max) 1200V

Collector Emitter Saturation Voltage 1.7V

Turn On Time 101 ns

Test Condition 800V, 75A, 1 Ω, 15V

Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A

Continuous Collector Current 200A

Turn Off Time-Nom (toff) 925 ns

IGBT Type Trench Field Stop

Gate Charge 425nC

Current - Collector Pulsed (Icm) 225A

Td (on/off) @ 25°C 60ns/620ns

Switching Energy 8620μJ (on), 11400μJ (off)

Gate-Emitter Voltage-Max 30V

Gate-Emitter Thr Voltage-Max 6.5V

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-264-3, TO-264AA

Weight 10.6g

Transistor Element Material SILICON

Dimensions

Height 5.21mm

Length 26.49mm

Width 20.5mm

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

Lead Free Lead Free

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