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IRGC25B120UB

Infineon Technologies
RoHS
RoHS RoHS compliant
Package Die
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT CHIP
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON

Technical

JESD-609 Code e0
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-XUUC-N
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 25A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
IGBT Type NPT
Gate-Emitter Thr Voltage-Max 6V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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