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IXBP5N160G

IXYS
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1600V 5.7A 68W TO220AB
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Technical Details

Supply Chain

Factory Lead Time 37 Weeks

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series BIMOSFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 68W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 140 ns
Power - Max 68W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 120 ns
Collector Emitter Voltage (VCEO) 1.6kV
Max Collector Current 5.7A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 1.6kV
Voltage - Collector Emitter Breakdown (Max) 1600V
Collector Emitter Saturation Voltage 4.9V
Turn On Time 340 ns
Test Condition 960V, 3A, 47 Ω, 10V
Vce(on) (Max) @ Vge, Ic 7.2V @ 15V, 3A
Turn Off Time-Nom (toff) 190 ns
Gate Charge 26nC
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V

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