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IXST30N60CD1

IXYS
RoHS
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Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description Trans IGBT Chip N-CH 600V 55A 3-Pin(2+Tab) TO-268AA
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3
Weight 4.500005g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*30N60
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 200W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 55A
Reverse Recovery Time 50 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 70 ns
Test Condition 480V, 30A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Turn Off Time-Nom (toff) 290 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 110A
Td (on/off) @ 25°C 30ns/90ns
Switching Energy 700μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Fall Time-Max (tf) 270ns

Compliance

RoHS Status RoHS Compliant
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