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Transistors - Bipolar (BJT) - Single
2SC5549,T6F(J

2SC5549,T6F(J

Toshiba Semiconductor and Storage

RoHS

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Package TO-226-3, TO-92-3 Long Body

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description TRANS NPN 1A 400V TO226-3

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Inventory: 9803

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 Long Body

Technical

Operating Temperature 150°C TJ

Packaging Bulk

Published 2007

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Power - Max 900mW

Transistor Type NPN

DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 40mA 5V

Current - Collector Cutoff (Max) 100μA ICBO

Vce Saturation (Max) @ Ib, Ic 1V @ 25mA, 200mA

Voltage - Collector Emitter Breakdown (Max) 400V

Current - Collector (Ic) (Max) 1A

Alternative Model

STMicroelectronics

Microsemi Corporation

Central Semiconductor Corp

Microsemi Corporation

STMicroelectronics

ON Semiconductor

STMicroelectronics

Taiwan Semiconductor Corporation

BZX84C3V6-E3-18

Vishay Semiconductor Diodes Division

Microsemi Corporation

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