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RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 121A 520W TO-247
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Inventory: 118
Minimum: 1
Total Price: USD $4.63
Unit Price: USD $4.629028
≥1 USD $4.629028
≥10 USD $4.49288
≥100 USD $4.356732
≥500 USD $4.186547

Technical Details

Supply Chain

Factory Lead Time 6 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 8?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish PURE MATTE TIN
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 520W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 520W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 121A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 46 ns
Test Condition 400V, 40A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Turn Off Time-Nom (toff) 304 ns
IGBT Type PT
Gate Charge 298nC
Current - Collector Pulsed (Icm) 202A
Td (on/off) @ 25°C 21ns/133ns
Switching Energy 715μJ (on), 607μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
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