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BLF8G24LS-200P,112
Ampleon USA Inc.RoHS
/
Package SOT539B
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
RF FET LDMOS 65V 17.2DB SOT539B
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Technical Details
Physical
Package / Case SOT539B
Surface Mount YES
Transistor Element Material SILICON
Compliance
RoHS Status Non-RoHS Compliant
Technical
Packaging Tube
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated 65V
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Frequency 2.3GHz~2.4GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BLF8G24
Reference Standard IEC-60134
JESD-30 Code R-CDFP-F4
Number of Elements 2
Configuration COMMON SOURCE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Current - Test 1.74A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual), Common Source
Gain 17.2dB
DS Breakdown Voltage-Min 65V
Power - Output 60W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
Alternative Model
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