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ATF-521P8-TR1

Broadcom Limited
RoHS
/
Package 8-WFDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description Trans JFET 7V 500mA pHEMT 8-Pin LPCC T/R
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Package / Case 8-WFDFN Exposed Pad
Number of Pins 8

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Subcategory FET RF Small Signal
Voltage - Rated DC 4.5V
Max Power Dissipation 1.5W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 2GHz
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection SOURCE
Current - Test 200mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 7V
Polarity/Channel Type N-CHANNEL
Transistor Type pHEMT FET
Continuous Drain Current (ID) 500mA
JEDEC-95 Code MO-229
Gate to Source Voltage (Vgs) 1V
Gain 17dB
Drain Current-Max (Abs) (ID) 0.5A
DS Breakdown Voltage-Min 7V
Power - Output 26.5dBm
FET Technology HIGH ELECTRON MOBILITY
Noise Figure 1.5dB

Alternative Model

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