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APTGT50DSK60T3G

Microsemi Corporation
RoHS
/
Package SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 600V 80A 32-Pin Case SP-3
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 32
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~175°C TJ
Packaging Bulk
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 176W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X25
Number of Elements 2
Configuration Dual Buck Chopper
Element Configuration Dual
Case Connection ISOLATED
Power - Max 176W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 3.15nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Turn Off Time-Nom (toff) 310 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 3.15nF @ 25V

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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