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MWI225-12E9

IXYS
RoHS
/
Package E+
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 1200V 355A 1400W E+
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Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E+
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 17
Terminal Finish Tin (Sn) - with Nickel (Ni) barrier
Additional Feature UL REGONIZED
Max Power Dissipation 1.4kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MWI
Pin Count 29
JESD-30 Code R-XUFM-X17
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 1400W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 355A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 14nF
Turn On Time 350 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 225A
Turn Off Time-Nom (toff) 800 ns
IGBT Type NPT
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 14nF @ 25V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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