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IRLMS2002GTRPBF

Infineon Technologies
RoHS
/
Package SOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 6.5A 6TSOP
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Supplier Device Package Micro6?(SOT23-6)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta
Element Configuration Single
Power Dissipation 2W
Turn On Delay Time 8.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 30mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Rise Time 11ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 1.31nF
Drain to Source Resistance 30mOhm
Rds On Max 30 mΩ

Dimensions

Height 1.2954mm
Length 2.9972mm
Width 1.75mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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