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SIDC09D60F6X1SA2

Infineon Technologies
RoHS
/
Package Die
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description DIODE GEN PURP 600V 30A WAFER
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Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Technical

Packaging Bulk
Published 2010
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 1
ECCN Code EAR99
HTS Code 8541.10.00.40
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number SIDC09D60
Pin Count 1
JESD-30 Code S-XUUC-N1
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 27μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.6V @ 30A
Operating Temperature - Junction -40°C~175°C
Output Current-Max 30A
Reverse Recovery Time-Max 0.126μs
Rep Pk Reverse Voltage-Max 600V
Number of Phases 1
Current - Average Rectified (Io) 30A DC
Voltage - DC Reverse (Vr) (Max) 600V
Application GENERAL PURPOSE

Compliance

RoHS Status Non-RoHS Compliant

Physical

Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Diode Element Material SILICON

Alternative Model

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