Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series GigaMOS?, HiPerFET?, TrenchT2?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 935W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 19000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 340A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 340A
Pulsed Drain Current-Max (IDM) 850A
DS Breakdown Voltage-Min 75V
Avalanche Energy Rating (Eas) 960 mJ