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SIDC14D60E6YX1SA1

Infineon Technologies
RoHS
/
Package Die
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description DIODE GEN PURP 600V 30A WAFER
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Diode Element Material SILICON

Technical

Packaging Bulk
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 1
ECCN Code EAR99
HTS Code 8541.10.00.40
Terminal Position UPPER
Terminal Form NO LEAD
Base Part Number SIDC14D60
JESD-30 Code S-XUUC-N1
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 27μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 30A
Operating Temperature - Junction -55°C~150°C
Output Current-Max 30A
Application FAST SOFT RECOVERY
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 30A DC
Number of Phases 1
Rep Pk Reverse Voltage-Max 600V

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

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