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SIDC08D60C8X1SA3

Infineon Technologies
RoHS
RoHS RoHS compliant
Package Die
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description DIODE GEN PURP 600V 30A WAFER
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Diode Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Packaging Bulk
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 1
ECCN Code EAR99
HTS Code 8541.10.00.40
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUUC-N1
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 27μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.95V @ 30A
Operating Temperature - Junction -40°C~175°C
Output Current-Max 30A
Application FAST SOFT RECOVERY
Halogen Free Halogen Free
Current - Average Rectified (Io) 30A DC
Drain to Source Voltage (Vdss) 600V
Number of Phases 1
Max Dual Supply Voltage 600V
Reverse Current-Max 27μA

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