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CP15TD1-24A

Powerex Inc.
RoHS
/
Package 26-DIP Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 1200V 15A 113W
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case 26-DIP Module
Transistor Element Material SILICON

Technical

Operating Temperature -20°C~150°C TJ
Published 2003
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 26
Max Power Dissipation 113W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 26
JESD-30 Code R-XUFM-X26
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 113W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 15A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 3.24nF
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 15A
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 3.24nF @ 10V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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