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APTCV60HM70BT3G

Microsemi Corporation
RoHS
/
Package SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 600V 50A 250W SP3
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Technical Details

Supply Chain

Factory Lead Time 22 Weeks

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3

Technical

Operating Temperature -40°C~150°C TJ
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Number of Elements 1
Configuration Boost Chopper, Full Bridge
Power - Max 250W
Input Standard
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 50A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 3.15nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 3.15nF @ 25V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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