APTGL60DH120T3G

Microsemi Corporation

RoHS

Package SP3

Category Discrete Semiconductor Products / Transistors - IGBTs - Modules

Description Trans IGBT Module N-CH 1.2KV 80A 16-Pin Case SP-3

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Technical Details

Supply Chain

Factory Lead Time 22 Weeks

Physical

Mount Chassis Mount, Screw

Mounting Type Chassis Mount

Package / Case SP3

Number of Pins 16

Technical

Operating Temperature -40°C~175°C TJ

Published 2012

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

ECCN Code EAR99

Subcategory Insulated Gate BIP Transistors

Max Power Dissipation 280W

Number of Elements 1

Configuration Asymmetrical Bridge

Element Configuration Dual

Power - Max 280W

Input Standard

Collector Emitter Voltage (VCEO) 1.2kV

Max Collector Current 80A

Current - Collector Cutoff (Max) 250μA

Collector Emitter Breakdown Voltage 1.2kV

Voltage - Collector Emitter Breakdown (Max) 1200V

Input Capacitance 2.77nF

Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 50A

IGBT Type Trench Field Stop

NTC Thermistor Yes

Gate-Emitter Voltage-Max 20V

Input Capacitance (Cies) @ Vce 2.77nF @ 25V

VCEsat-Max 2.25 V

Compliance

RoHS Status RoHS Compliant

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