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APTGT30TL60T3G

Microsemi Corporation
RoHS
/
Package SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 600V 50A 32-Pin Case SP-3
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Technical Details

Supply Chain

Factory Lead Time 22 Weeks

Technical

Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 16
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 90W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X16
Number of Elements 4
Configuration Three Level Inverter
Case Connection ISOLATED
Power - Max 90W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 50A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 1.6nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Turn Off Time-Nom (toff) 310 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 1.6nF @ 25V
VCEsat-Max 1.9 V

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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