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FP30R07U1E4BPSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 650V 50A 160W
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Technical Details

Physical

Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Number of Pins 1
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 23
ECCN Code EAR99
Additional Feature UL APPROVED
Max Power Dissipation 160W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X23
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 160W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 650V
Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 50A
Collector Emitter Saturation Voltage 1.6V
Turn On Time 40 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Turn Off Time-Nom (toff) 274 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 1.9nF @ 25V

Compliance

RoHS Status RoHS Compliant
Lead Free Contains Lead

Alternative Model

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