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0510-50A

Microsemi Corporation
RoHS
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Package 55AV
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description TRANS RF BIPO 50W 1000MHZ 55AV2
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Technical Details

Supply Chain

Factory Lead Time 13 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 1996
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature HIGH RELIABILITY
Max Power Dissipation 50W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-CDFM-F4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Max Collector Current 3.7A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 500mA 5V
Collector Emitter Breakdown Voltage 27V
Gain 7dB
Current - Collector (Ic) (Max) 3.7A
Frequency - Transition 500MHz~1GHz
Highest Frequency Band ULTRA HIGH FREQUENCY B

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case 55AV
Number of Pins 55
Transistor Element Material SILICON

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