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HN1B04FE-Y,LF

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description TRANS NPN/PNP 50V 0.15A ES6
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Inventory: 188
Minimum: 1
Total Price: USD $0.26
Unit Price: USD $0.25872
≥1 USD $0.25872
≥10 USD $0.179256
≥100 USD $0.087688
≥500 USD $0.073107
≥1000 USD $0.050801
≥3000 USD $0.044029

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Max Power Dissipation 100mW
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS
Power - Max 100mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN AND PNP
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 80MHz
Max Breakdown Voltage 50V
Frequency - Transition 80MHz

Alternative Model

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