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MBR120200CTR

GeneSiC Semiconductor
RoHS
RoHS RoHS compliant
Package Twin Tower
Category Discrete Semiconductor Products / Diodes - Rectifiers - Arrays
Description DIODE SCHOTTKY 200V 60A 2 TOWER
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Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status PRODUCTION (Last Updated: 5 months ago)

Compliance

RoHS Status RoHS Compliant

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON

Technical

Packaging Bulk
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 200V
Voltage - Forward (Vf) (Max) @ If 920mV @ 60A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 200V
Average Rectified Current 60A
Number of Phases 1
Non-rep Pk Forward Current-Max 800A
Diode Configuration 1 Pair Common Anode
Reverse Current-Max 1000μA

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