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BC33725TAR

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT NPN Si Transistor Epitaxial
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Inventory: 9202
Minimum: 1
Total Price: USD $0.03
Unit Price: USD $0.031815
≥1 USD $0.031815
≥10 USD $0.030879
≥100 USD $0.029943
≥500 USD $0.028774

Technical Details

Supply Chain

Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Technical

Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 800mA
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC337
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 700mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 10V
Emitter Base Voltage (VEBO) 5V
hFE Min 100

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 4.58mm
Length 4.58mm
Width 3.86mm

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON

Alternative Model

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