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NJL21194DG

Rochester Electronics, LLC
RoHS
RoHS RoHS compliant
Package TO-264-5
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description POWER BIPOLAR TRANSISTOR, NPN
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Inventory: 9028
Minimum: 1
Total Price: USD $1.7
Unit Price: USD $1.70373
≥1 USD $1.70373
≥10 USD $1.398495
≥100 USD $1.354605
≥500 USD $1.310715
≥1000 USD $1.266825

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-264-5
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 5
JESD-30 Code R-PSFM-T5
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power - Max 200W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 8A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
Voltage - Collector Emitter Breakdown (Max) 250V
Current - Collector (Ic) (Max) 16A
Transition Frequency 4MHz
Frequency - Transition 4MHz

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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