2N4123TA

ON Semiconductor

RoHS

Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description TRANS NPN 30V 0.2A TO-92

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Technical Details

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Pins 3

Supplier Device Package TO-92-3

Compliance

RoHS Status RoHS Compliant

Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Box (TB)

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Max Operating Temperature 150°C

Min Operating Temperature -55°C

Voltage - Rated DC 40V

Max Power Dissipation 625mW

Current Rating 200mA

Frequency 250MHz

Base Part Number 2N4123

Number of Elements 1

Polarity NPN

Element Configuration Single

Power Dissipation 625mW

Power - Max 625mW

Gain Bandwidth Product 250MHz

Transistor Type NPN

Collector Emitter Voltage (VCEO) 30V

Max Collector Current 200mA

DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 2mA 1V

Current - Collector Cutoff (Max) 50nA ICBO

Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA

Collector Emitter Breakdown Voltage 30V

Voltage - Collector Emitter Breakdown (Max) 30V

Current - Collector (Ic) (Max) 200mA

Frequency - Transition 250MHz

Collector Base Voltage (VCBO) 40V

Emitter Base Voltage (VEBO) 5V

hFE Min 50

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