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FJP9100TU

ON Semiconductor
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANS NPN DARL 275V 4A TO-220
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 40W
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 5mA, 2A
Voltage - Collector Emitter Breakdown (Max) 275V
Current - Collector (Ic) (Max) 4A

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