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2SA1930,Q(J

Toshiba Semiconductor and Storage
RoHS
/
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANS PNP 2A 180V TO220-3
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220NIS

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 180V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 200MHz

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