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Transistors - Bipolar (BJT) - Single
2SC2655-Y(T6ND1,AF

2SC2655-Y(T6ND1,AF

Toshiba Semiconductor and Storage

RoHS

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Package TO-226-3, TO-92-3 Long Body

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description TRANS NPN 2A 50V TO226-3

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Inventory: 5212

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 Long Body

Technical

Operating Temperature 150°C TJ

Packaging Bulk

Published 2009

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Power - Max 900mW

Transistor Type NPN

DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 2V

Current - Collector Cutoff (Max) 1μA ICBO

Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A

Voltage - Collector Emitter Breakdown (Max) 50V

Current - Collector (Ic) (Max) 2A

Frequency - Transition 100MHz

Alternative Model

TT Electronics/Optek Technology

Vishay Semiconductor Diodes Division

Taiwan Semiconductor Corporation

Comchip Technology

Microsemi Corporation

MMSZ5239B-G3-18

Vishay Semiconductor Diodes Division

JANTX1N980BUR-1

Microsemi Corporation

WeEn Semiconductors

Broadcom Limited

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