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2SJ380(F)

Toshiba Semiconductor and Storage
RoHS
/
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 100V 12A TO220NIS
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 35W Tc
Power Dissipation 35W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 210m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 12A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage -100V
Isolation Voltage 2kV
Nominal Vgs -2 V

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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