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BS870-7-F

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET, N CH, 60V, 0.25A, SOT-23
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Inventory: 12790
Minimum: 1
Total Price: USD $0.32
Unit Price: USD $0.3234
≥1 USD $0.3234
≥10 USD $0.220836
≥100 USD $0.108016
≥500 USD $0.090071
≥1000 USD $0.062592

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 5Ohm
Subcategory FET General Purpose Powers
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 250mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 300mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C 250mA Ta
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 5 ns
Continuous Drain Current (ID) 250mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.25A
Drain to Source Breakdown Voltage 80V
Dual Supply Voltage 60V
Nominal Vgs 2 V
Feedback Cap-Max (Crss) 5 pF

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1mm
Length 2.9mm
Width 1.3mm

Alternative Model

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