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Transistors - Bipolar (BJT) - Single
PN3566_D26Z

PN3566_D26Z

ON Semiconductor

RoHS

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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description TRANS NPN 30V 0.6A TO-92

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Technical

Packaging Tape & Reel (TR)

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Power - Max 625mW

Transistor Type NPN

DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 10mA 10V

Current - Collector Cutoff (Max) 50nA ICBO

Vce Saturation (Max) @ Ib, Ic 1V @ 10mA, 100mA

Voltage - Collector Emitter Breakdown (Max) 30V

Current - Collector (Ic) (Max) 600mA

Alternative Model

APTC60TAM21SCTPAG

Microsemi Corporation

ON Semiconductor

Microsemi Corporation

Vishay Semiconductor Diodes Division

STMicroelectronics

Panasonic Electronic Components

Microsemi Corporation

Vishay Semiconductor Diodes Division

Littelfuse Inc.

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