TN6719A_D27Z

ON Semiconductor

RoHS

Package TO-226-3, TO-92-3 Long Body (Formed Leads)

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description Bipolar Transistors - BJT NPN Dbl-Dif 300V SI Exptl Plnr

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Inventory: 2308

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)

Supplier Device Package TO-226

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Reel (TR)

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Power - Max 1W

Transistor Type NPN

DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V

Current - Collector Cutoff (Max) 100nA ICBO

Vce Saturation (Max) @ Ib, Ic 750mV @ 3mA, 30mA

Voltage - Collector Emitter Breakdown (Max) 300V

Current - Collector (Ic) (Max) 200mA

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