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PN100_G

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description INTEGRATED CIRCUIT
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number PN100
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 5V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 200mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 250MHz

Alternative Model

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