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R6504ENJTL

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description NCH 650V 4A POWER MOSFET. R6504
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Inventory: 238
Minimum: 1
Total Price: USD $2.12
Unit Price: USD $2.11596
≥1 USD $2.11596
≥10 USD $1.7556
≥100 USD $1.397642
≥500 USD $1.182609

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 58W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.05 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 130μA
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 4A
Pulsed Drain Current-Max (IDM) 12A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 34.8 mJ

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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