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SUP40N10-30-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 38.5A TO220AB
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Inventory: 48067
Minimum: 1
Total Price: USD $0.42
Unit Price: USD $0.415958
≥1 USD $0.415958
≥10 USD $0.342143
≥100 USD $0.33117
≥500 USD $0.320198
≥1000 USD $0.310223

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.1W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 30m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 38.5A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 38.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 75A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 61 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
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