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MPSW45RLRE

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 Long Body (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Transistors Darlington 1A 50V NPN
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.75
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MPSW45
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 1W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 25000 @ 200mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 100MHz
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 12V
hFE Min 25000
Continuous Collector Current 1A

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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