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SI7784DP-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V 35A 27.7W 6.0mohm @ 10V
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Inventory: 312
Minimum: 1
Total Price: USD $13.06
Unit Price: USD $13.064258
≥1 USD $13.064258
≥10 USD $10.720133
≥100 USD $10.384973
≥500 USD $10.049813
≥1000 USD $9.714653

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Supplier Device Package PowerPAK? SO-8
Weight 506.605978mg

Dimensions

Height 1.04mm
Length 4.9mm
Width 5.89mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 6mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5W Ta 27.7W Tc
Element Configuration Single
Power Dissipation 5W
Turn On Delay Time 22 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 15V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 35A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.6nF
Drain to Source Resistance 6.5mOhm
Rds On Max 6 mΩ
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