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Transistors - Bipolar (BJT) - Single
CP219-2N5339-CM

CP219-2N5339-CM

Central Semiconductor Corp

RoHS

/

Package Die

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Description HIGH CURRENT TRANSISTOR

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Technical Details

Physical

Mounting Type Surface Mount

Package / Case Die

Technical

Operating Temperature -65°C~150°C TJ

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Power - Max 6W

Transistor Type NPN

DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A 2V

Current - Collector Cutoff (Max) 100μA

Vce Saturation (Max) @ Ib, Ic 1.2V @ 500mA, 5A

Voltage - Collector Emitter Breakdown (Max) 100V

Current - Collector (Ic) (Max) 5A

Frequency - Transition 30MHz

Alternative Model

Rochester Electronics, LLC

Infineon Technologies

Taiwan Semiconductor Corporation

IDK03G65C5XTMA2

Infineon Technologies

Comchip Technology

Vishay Semiconductor Diodes Division

Microsemi Corporation

Taiwan Semiconductor Corporation

ON Semiconductor

Diodes Incorporated

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