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SIZ710DT-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 6-PowerPair?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 20V 16A / 35A N-CH MOSFET
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Inventory: 19453
Minimum: 1
Total Price: USD $1.32
Unit Price: USD $1.32132
≥1 USD $1.32132
≥10 USD $1.083852
≥100 USD $0.842688
≥500 USD $0.714308
≥1000 USD $0.58188

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerPair?
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2018
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 6.8mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 48W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SIZ710
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.6W
Case Connection DRAIN
Power - Max 27W 48W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.8m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 820pF @ 10V
Current - Continuous Drain (Id) @ 25°C 16A 35A
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 15 ns
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 35A
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 70A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 2.2 V

Compliance

REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 750μm
Length 6mm
Width 3.73mm

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