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SSM6N58NU,LF

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package 6-WDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N-Ch Sm Sig FET 4A 30V 2-in-1
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Inventory: 147266
Minimum: 1
Total Price: USD $0.4
Unit Price: USD $0.39732
≥1 USD $0.39732
≥10 USD $0.30954
≥100 USD $0.185816
≥500 USD $0.172049
≥1000 USD $0.116997

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1W
Number of Channels 2
Element Configuration Dual
Turn On Delay Time 26 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 84m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 129pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 1V
Drain to Source Breakdown Voltage 30V
FET Feature Logic Level Gate, 1.8V Drive

Compliance

RoHS Status RoHS Compliant

Alternative Model

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