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SI1922EDH-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description VISHAY - SI1922EDH-T1-GE3 - MOSFET, NN CH, 20V, 1.3A, SOT363
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Inventory: 91174
Minimum: 1
Total Price: USD $0.28
Unit Price: USD $0.282293
≥1 USD $0.282293
≥10 USD $0.23142
≥100 USD $0.224438
≥500 USD $0.217455
≥1000 USD $0.210473
≥3000 USD $0.188528

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 7.512624mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 1.25W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI1922
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 740mW
Turn On Delay Time 22 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 198m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 8V
Rise Time 80 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 220 ns
Turn-Off Delay Time 645 ns
Continuous Drain Current (ID) 1.3A
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate

Dimensions

Height 1.1mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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