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CSD17556Q5BT

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description This 30 V, 1.2 m, 56 mm NexFET power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.
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Inventory: 1066
Minimum: 1
Total Price: USD $2.74
Unit Price: USD $2.74428
≥1 USD $2.74428
≥10 USD $2.28228
≥100 USD $1.816214

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Dimensions

Length 5mm
Width 6mm
Thickness 950μm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD17556
Number of Elements 1
Power Dissipation-Max 3.1W Ta 191W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 1.65V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7020pF @ 15V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 39nC @ 4.5V
Rise Time 26ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 215A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 34A
Pulsed Drain Current-Max (IDM) 214A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 500 mJ

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